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Samsung 990 PRO MZ-V9P2T0BW, SSD, 2 TB, PCIe 4.0 x4 (NVMe)
$ 91.21
DescriptionReach max performance of PCIe 4.0. Experience longer-lasting, opponent-blasting speed. The in-house controller’s smart heat control delivers supreme power efficiency while maintaining ferocious speed and performance, so you can stay at the top of your game.Samsung NVMe SSD powered by latest in-house controllerExperience performance of PCIe Gen 4.0PCIe 4.0 speed maximizedHuge speed boost, faster random read/write speeds than 980 PRO. Fly high in gaming, video and 3D editing, data analysis, and more.Breakthrough power efficiencyMore power-efficient performance. Higher performance usually consumes more power. But, 990 PRO uses less power with over 50% improved performance per watt over 980 PRO. This low-power design makes max PCIe 4.0 performance possible with optimal power efficiency.Smart thermal solutionSpeed beyond the heat. The nickel-coated controller and cutting-edge thermal control algorithm manage heat for unwavering performance. The heat spreader label controls NAND chip heat, while Dynamic Thermal Guard keeps temperatures optimal.The champion makerA more than 55% improvement in random performance enables faster loads for ultimate gaming realism on PS5 and DirectStorage PC games.Main SpecificationsProduct DescriptionSamsung 990 PRO MZ-V9P2T0BW – SSD – 2 TB – PCIe 4.0 x4 (NVMe)TypeSolid state drive – internalCapacity2 TBHardware EncryptionYesEncryption Algorithm256-bit AESNAND Flash Memory TypeTriple-level cell (TLC)Form FactorM.2 2280InterfacePCIe 4.0 x4 (NVMe)Data Transfer Rate8 GBpsFeaturesSamsung V-NAND 3bit MLC Technology, 2GB LPDDR4 DRAM cache, TRIM support, Auto Garbage Collection Algorithm, Dynamic Thermal Guard protection, sleep mode, NVMe 2.0, S.M.A.R.T.Dimensions (WxDxH)22 mm x 80 mm x 2.3 mmWeight9 gExtended SpecificationsGeneralDevice TypeSolid state drive – internalCapacity2 TBHardware EncryptionYesEncryption Algorithm256-bit AESNAND Flash Memory TypeTriple-level cell (TLC)Form FactorM.2 2280InterfacePCIe 4.0 x4 (NVMe)FeaturesSamsung V-NAND 3bit MLC Technology, 2GB LPDDR4 DRAM cache, TRIM support, Auto Garbage Collection Algorithm, Dynamic Thermal Guard protection, sleep mode, NVMe 2.0, S.M.A.R.T.Width22 mmDepth80 mmHeight2.3 mmWeight9 gPerformanceSSD Endurance1200 TBDrive Transfer Rate8 GBps (external)Internal Data Rate7450 MBps (read) / 6900 MBps (write)4KB Random Read1400000 IOPS4KB Random Write1550000 IOPSReliabilityMTBF1,500,000 hoursExpansion & ConnectivityCompatible BayM.2 2280PowerPower Consumption5.8 watt (read) 5.1 watt (write) 55 mW (idle) 5 mW (L1.2 mode)Software & System RequirementsSoftware IncludedSamsung Magician SoftwareMiscellaneousCompliant StandardsIEEE 1667, FCC, UKCA, cRUus, VCCI, EACPackage DetailsBoxEnvironmental ParametersMin Operating Temperature0 °CMax Operating Temperature70 °CMin Storage Temperature-40 °CMax Storage Temperature85 °CHumidity Range Operating5 – 95% (non-condensing)Shock Tolerance (non-operating)1500 g @ 0.5 msVibration Tolerance (non-operating)20 g @ 20-2000 Hz



